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Title: Deciphering the ultra-high plasticity in metal monochalcogenides
Authors: Wong, LW 
Yang, K 
Han, W 
Zheng, X 
Wong, HY 
Tsang, CS 
Lee, CS
Lau, SP 
Ly, TH
Yang, M 
Zhao, J 
Issue Date: Feb-2024
Source: Nature materials. Feb. 2024, v. 23, no. 2, p. 196-204
Abstract: The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.
Publisher: Nature Publishing Group
Journal: Nature materials 
ISSN: 1476-1122
EISSN: 1476-4660
DOI: 10.1038/s41563-023-01788-7
Rights: © The Author(s), under exclusive licence to Springer Nature Limited 2023
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use (https://www.springernature.com/gp/open-research/policies/accepted-manuscript-terms), but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41563-023-01788-7.
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