Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/106315
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Mechanical Engineering | - |
dc.creator | Li, Q | - |
dc.creator | Tang, X | - |
dc.creator | Zhu, L | - |
dc.creator | Ruan, H | - |
dc.date.accessioned | 2024-05-09T00:52:41Z | - |
dc.date.available | 2024-05-09T00:52:41Z | - |
dc.identifier.issn | 0894-9166 | - |
dc.identifier.uri | http://hdl.handle.net/10397/106315 | - |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.rights | © The Chinese Society of Theoretical and Applied Mechanics 2020 | en_US |
dc.rights | This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use(https://www.springernature.com/gp/open-research/policies/accepted-manuscript-terms), but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s10338-020-00182-z. | en_US |
dc.subject | Finite element method | en_US |
dc.subject | GaN-based nanofilm | en_US |
dc.subject | Heat transfer behavior | en_US |
dc.subject | Multi-physical effect | en_US |
dc.subject | Prestress fields | en_US |
dc.subject | Stress-dependent thermal conductivity | en_US |
dc.title | Effect of stress-dependent thermal conductivity on thermo-mechanical coupling behavior in GaN-based nanofilm under pulse heat source | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 27 | - |
dc.identifier.epage | 39 | - |
dc.identifier.volume | 34 | - |
dc.identifier.issue | 1 | - |
dc.identifier.doi | 10.1007/s10338-020-00182-z | - |
dcterms.abstract | The thermal properties of a nanostructured semiconductor are affected by multi-physical fields, such as stress and electromagnetic fields, causing changes in temperature and strain distributions. In this work, the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated. The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses. Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm, namely, the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm. Under the same heat source, the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K. These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Acta mechanica solida sinica, Feb. 2021, v. 34, no. 1, p. 27-39 | - |
dcterms.isPartOf | Acta mechanica solida sinica | - |
dcterms.issued | 2021-02 | - |
dc.identifier.scopus | 2-s2.0-85089294323 | - |
dc.identifier.eissn | 1860-2134 | - |
dc.description.validate | 202405 bcch | - |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | ME-0119 | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | National Natural Science Foundation of China; Fundamental Research Funds for the Central Universities | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 50561837 | en_US |
dc.description.oaCategory | Green (AAM) | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Ruan_Effect_Stress-Dependent_Thermal.pdf | Pre-Published version | 1.64 MB | Adobe PDF | View/Open |
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