Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100430
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorYang, ZYen_US
dc.creatorLeung, CWen_US
dc.creatorLai, PTen_US
dc.creatorPong, PWTen_US
dc.date.accessioned2023-08-08T01:56:06Z-
dc.date.available2023-08-08T01:56:06Z-
dc.identifier.isbn978-1-5090-2439-1 (Electronic)en_US
dc.identifier.urihttp://hdl.handle.net/10397/100430-
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.rightsThe following publication Z. Y. Yang, C. W. Leung, P. T. Lai and P. W. T. Pong, "A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET," 2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 2016, pp. 1-2 is available at https://doi.org/10.1109/ISNE.2016.7543340.en_US
dc.subjectInterface trapsen_US
dc.subjectMagnetic sensitivityen_US
dc.subjectSectorial SD-MAGFETsen_US
dc.subjectSi/SiO2 interfaceen_US
dc.titleA numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFETen_US
dc.typeConference Paperen_US
dc.identifier.spage1en_US
dc.identifier.epage2en_US
dc.identifier.doi10.1109/ISNE.2016.7543340en_US
dcterms.abstractThis work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitation2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 4-5 May 2016, p. 1-2en_US
dcterms.issued2016-
dc.identifier.scopus2-s2.0-84985993382-
dc.relation.ispartofbook2016 5th International Symposium on Next-Generation Electronics (ISNE)en_US
dc.relation.conferenceInternational Symposium on Next-Generation Electronics (ISNE)-
dc.description.validate202308 bcvc-
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0761-
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS9579428-
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Conference Paper
Files in This Item:
File Description SizeFormat 
Leung_Numerical_Investigation_Effects.pdfPre-Published version885.93 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Final Accepted Manuscript
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

108
Citations as of Apr 14, 2025

Downloads

52
Citations as of Apr 14, 2025

SCOPUSTM   
Citations

2
Citations as of Sep 12, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.