Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100311
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physicsen_US
dc.creatorTang, Wen_US
dc.creatorHuang, Yen_US
dc.creatorHan, Len_US
dc.creatorLiu, Ren_US
dc.creatorSu, Yen_US
dc.creatorGuo, Xen_US
dc.creatorYan, Fen_US
dc.date.accessioned2023-08-08T01:54:53Z-
dc.date.available2023-08-08T01:54:53Z-
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://hdl.handle.net/10397/100311-
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rightsThis journal is © The Royal Society of Chemistry 2019en_US
dc.rightsThe following publication Tang, W., Huang, Y., Han, L., Liu, R., Su, Y., Guo, X., & Yan, F. (2019). Recent progress in printable organic field effect transistors. Journal of Materials Chemistry C, 7(4), 790-808 is available at https://doi.org/10.1039/c8tc05485a.en_US
dc.titleRecent progress in printable organic field effect transistorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage790en_US
dc.identifier.epage808en_US
dc.identifier.volume7en_US
dc.identifier.issue4en_US
dc.identifier.doi10.1039/c8tc05485aen_US
dcterms.abstractPrintable organic field effect transistors (OFETs) have been investigated for more than 20 years, aiming at various emerging applications including flexible/wearable electronics, displays and sensors. Since many comprehensive review articles for this field have been published, here we will focus on the recent progress of this field and address the following issues critical to the future applications of OFETs. First, downscaling technologies for the printing of OFETs with fine resolution will be reviewed. The approaches for short channels and small overlapping as well as patterning of organic semiconductors are summarized. Second, various approaches for realizing low-voltage OFETs will be presented, which are critical to the power consumption of organic devices. Specifically, the operational voltages of OFETs have been successfully decreased to several volts by increasing the gate dielectric capacitance and reducing the sub-gap density of states at the channel. This review will provide guidelines for material design and fabrication processes of OFETs with high performance and advanced applications.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of materials chemistry C, 28 Jan. 2019, v. 7, no. 4, p. 790-808en_US
dcterms.isPartOfJournal of materials chemistry Cen_US
dcterms.issued2019-01-28-
dc.identifier.scopus2-s2.0-85060634853-
dc.identifier.eissn2050-7534en_US
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0382-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Key R&D Program of China; The NSFC of Chinaen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25769385-
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Yan_Recent_Progress_Printable.pdfPre-Published version3 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Final Accepted Manuscript
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

63
Citations as of Apr 14, 2025

Downloads

132
Citations as of Apr 14, 2025

SCOPUSTM   
Citations

130
Citations as of Sep 12, 2025

WEB OF SCIENCETM
Citations

111
Citations as of Oct 10, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.