Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTio₃ films

Abstract

The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTio₃ (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼10⁵ after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.