Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100238
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorJiang, Xen_US
dc.creatorWei, Men_US
dc.creatorChan, CHen_US
dc.creatorWang, Yen_US
dc.creatorLai, Ren_US
dc.creatorWang, Jen_US
dc.creatorDai, Jen_US
dc.creatorQiu, Xen_US
dc.date.accessioned2023-08-08T01:54:04Z-
dc.date.available2023-08-08T01:54:04Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/100238-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2020 Author(s).en_US
dc.rightsPublished under license by AIP Publishing.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Xue Jiang, Minglong Wei, Cheuk Ho Chan, Yingyue Wang, Ruilian Lai, Jianbo Wang, Jiyan Dai, Xiaoyan Qiu; Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films. Appl. Phys. Lett. 9 March 2020; 116 (10): 102101 and may be found at https://doi.org/10.1063/1.5123254.en_US
dc.titleEffect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTio₃ filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume116en_US
dc.identifier.issue10en_US
dc.identifier.doi10.1063/1.5123254en_US
dcterms.abstractThe effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTio₃ (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 °C, but 800 °C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at ≤600 °C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <±0.6 V, while 450 °C-deposited Fe-STO films retain an ON/OFF resistance ratio of ∼10⁵ after more than 2500 endurance cycles and 600 °C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 9 Mar. 2020, v. 116, no. 10, 102101en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2020-03-09-
dc.identifier.scopus2-s2.0-85082175939-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn102101en_US
dc.description.validate202308 bcvcen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberAP-0216-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Natural Science Foundation of China; The Natural Science Foundation of Chongqing; The Fundamental Research Fund for the Central Universitiesen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS22183759-
dc.description.oaCategoryVoR alloweden_US
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