Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/70856
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Title: Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
Authors: Petti, L
Pattanasattayavong, P
Lin, YH
Munzenrieder, N
Cantarella, G
Yaacobi-Gross, N
Yan, F 
Troster, G
Anthopoulos, TD
Issue Date: 2017
Source: Applied physics letters, 2017, v. 110, no. 11, 113504, p. 113504-1-113504-5
Abstract: We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on freestanding plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm(2) V-1 s(-1) and 0.013 cm(2) V-1 s(-1), respectively, current on/off ratio in the range 10(2) -10(4), and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4mm, demonstrating the potential of the technology for flexible electronics. Published by AIP Publishing.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4978531
Rights: © 2017 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in L. Petti et al., Appl. Phys. Lett. 110, 113504 (2017) and may be found at https://dx.doi.org/10.1063/1.4978531
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