Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4984
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Title: Microscopic mechanism of leakage currents in silica junctions
Authors: Luo, X
Wang, B
Zheng, Y
Issue Date: 1-Oct-2009
Source: Journal of applied physics, 1 Oct. 2009, v. 106, no. 7, 073711, p. 1-4
Abstract: Combining the nonequilibrium Green’s functions with the density-functional theory, we investigated the structural and electronic properties of silica junctions sandwiched between Al electrodes. The results show that the oxygen vacancies and tensile strain field play an important role in the electron transport properties of these two-probe systems. Sizable changes in leakage current across the barrier are found for the oxygen deficient system. It is found that Si dangling bonds formed by the introduction of oxygen vacancies are the main building blocks of the conduction channel in silica thin film. The midband gap states generated by the Si dangling bonds contribute to the leakage current. Detail analysis shows that four conduction channels are generated in silica junction after the presence of oxygen vacancies, resulting in a large enhancement of the electron transmission coefficient at the Fermi level. This leakage current mechanism provides useful information in the microelectronic designs.
Keywords: Aluminium
Dangling bonds
Density functional theory
Electrodes
Energy gap
Fermi level
Green's function methods
Leakage currents
Metal-insulator boundaries
Silicon compounds
Tensile strength
Thin films
Vacancies (crystal)
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.3236640
Rights: © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Luo, B. Wang & Y. Zheng, J. Appl. Phys. 106, 073711 (2009) and may be found at http://link.aip.org/link/?jap/106/073711.
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