Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4984
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorLuo, X-
dc.creatorWang, B-
dc.creatorZheng, Y-
dc.date.accessioned2014-12-11T08:28:29Z-
dc.date.available2014-12-11T08:28:29Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4984-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Luo, B. Wang & Y. Zheng, J. Appl. Phys. 106, 073711 (2009) and may be found at http://link.aip.org/link/?jap/106/073711.en_US
dc.subjectAluminiumen_US
dc.subjectDangling bondsen_US
dc.subjectDensity functional theoryen_US
dc.subjectElectrodesen_US
dc.subjectEnergy gapen_US
dc.subjectFermi levelen_US
dc.subjectGreen's function methodsen_US
dc.subjectLeakage currentsen_US
dc.subjectMetal-insulator boundariesen_US
dc.subjectSilicon compoundsen_US
dc.subjectTensile strengthen_US
dc.subjectThin filmsen_US
dc.subjectVacancies (crystal)en_US
dc.titleMicroscopic mechanism of leakage currents in silica junctionsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume106-
dc.identifier.issue7-
dc.identifier.doi10.1063/1.3236640-
dcterms.abstractCombining the nonequilibrium Green’s functions with the density-functional theory, we investigated the structural and electronic properties of silica junctions sandwiched between Al electrodes. The results show that the oxygen vacancies and tensile strain field play an important role in the electron transport properties of these two-probe systems. Sizable changes in leakage current across the barrier are found for the oxygen deficient system. It is found that Si dangling bonds formed by the introduction of oxygen vacancies are the main building blocks of the conduction channel in silica thin film. The midband gap states generated by the Si dangling bonds contribute to the leakage current. Detail analysis shows that four conduction channels are generated in silica junction after the presence of oxygen vacancies, resulting in a large enhancement of the electron transmission coefficient at the Fermi level. This leakage current mechanism provides useful information in the microelectronic designs.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Oct. 2009, v. 106, no. 7, 073711, p. 1-4-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2009-10-01-
dc.identifier.isiWOS:000270915600056-
dc.identifier.scopus2-s2.0-70350097418-
dc.identifier.eissn1089-7550-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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