Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4424
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Title: Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
Authors: Wang, K
Tai, G
Wong, KH
Lau, SP 
Guo, W
Issue Date: Jun-2011
Source: AIP advances, June 2011, v. 1, no. 2, 022141, p. 1-9
Abstract: We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm² each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
Keywords: Graphene
Nondestructive testing
Pulsed laser deposition
Raman spectra
Transmission electron microscopy
Publisher: American Institute of Physics
Journal: AIP advances 
ISSN: 2158-3226 (online)
DOI: 10.1063/1.3602855
Rights: © 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.
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