Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/3249
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Title: Development of 〈110〉 texture in copper thin films
Authors: Wei, HL
Huang, H
Woo, CH 
Zheng, RK
Wen, GH
Zhang, XX
Issue Date: 1-Apr-2002
Source: Applied physics letters, 1 Apr, 2002, v. 80, no. 13, p. 2290-2292
Abstract: Apart from the scientific interest, texture development in copper thin films is of crucial importance to their applications as interconnects or corrosion resistant coating. We report here a dominant 〈110〉 texture of copper thin films—preferred for oxidation-resistant applications—deposited by direct current magnetron sputtering. Scanning electron microscopy shows that the copper films go through a transition from 〈111〉 columns to 〈110〉 hillocks as the deposition proceeds. Cross-sectional transmission electron microscopy (TEM) indicates that the 〈110〉 grains nucleate at boundaries of 〈111〉 grains. Further, we have proposed a stress-driven nucleation and growth model of 〈110〉 grains based on the x-ray diffraction characterization and the TEM observations.
Keywords: Metallic thin films
Iintegrated circuit interconnections
Corrosion protective coatings
Sputtered coatings
Scanning electron microscopy
Transmission electron microscopy
Grain boundaries
Grain boundaries
X-ray diffraction
Sputter deposition
Texture
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.1466518
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. L. Wei et al., Appl. Phys. Lett. 80, 2290 (2002) and may be found at http://apl.aip.org/resource/1/applab/v80/i13/p2290_s1
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