Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/3249
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Mechanical Engineering-
dc.creatorWei, HL-
dc.creatorHuang, H-
dc.creatorWoo, CH-
dc.creatorZheng, RK-
dc.creatorWen, GH-
dc.creatorZhang, XX-
dc.date.accessioned2014-12-11T08:27:01Z-
dc.date.available2014-12-11T08:27:01Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/3249-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. L. Wei et al., Appl. Phys. Lett. 80, 2290 (2002) and may be found at http://apl.aip.org/resource/1/applab/v80/i13/p2290_s1en_US
dc.subjectMetallic thin filmsen_US
dc.subjectIintegrated circuit interconnectionsen_US
dc.subjectCorrosion protective coatingsen_US
dc.subjectSputtered coatingsen_US
dc.subjectScanning electron microscopyen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectGrain boundariesen_US
dc.subjectGrain boundariesen_US
dc.subjectX-ray diffractionen_US
dc.subjectSputter depositionen_US
dc.subjectTextureen_US
dc.titleDevelopment of 〈110〉 texture in copper thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Wooen_US
dc.identifier.spage2290-
dc.identifier.epage2292-
dc.identifier.volume80-
dc.identifier.issue13-
dc.identifier.doi10.1063/1.1466518-
dcterms.abstractApart from the scientific interest, texture development in copper thin films is of crucial importance to their applications as interconnects or corrosion resistant coating. We report here a dominant 〈110〉 texture of copper thin films—preferred for oxidation-resistant applications—deposited by direct current magnetron sputtering. Scanning electron microscopy shows that the copper films go through a transition from 〈111〉 columns to 〈110〉 hillocks as the deposition proceeds. Cross-sectional transmission electron microscopy (TEM) indicates that the 〈110〉 grains nucleate at boundaries of 〈111〉 grains. Further, we have proposed a stress-driven nucleation and growth model of 〈110〉 grains based on the x-ray diffraction characterization and the TEM observations.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 1 Apr, 2002, v. 80, no. 13, p. 2290-2292-
dcterms.isPartOfApplied physics letters-
dcterms.issued2002-04-01-
dc.identifier.isiWOS:000174623300018-
dc.identifier.scopus2-s2.0-79956051802-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr08837-
dc.description.ros2001-2002 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Wei_et_al_Copper_Thin_Films.pdf437.31 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

146
Last Week
1
Last month
Citations as of Apr 14, 2024

Downloads

257
Citations as of Apr 14, 2024

SCOPUSTM   
Citations

50
Last Week
0
Last month
1
Citations as of Apr 19, 2024

WEB OF SCIENCETM
Citations

48
Last Week
0
Last month
0
Citations as of Apr 18, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.