Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2504
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Title: Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers
Authors: Wang, SM
Leung, DCW 
Chan, PKL
Issue Date: 12-Jul-2010
Source: Applied physics letters, 12 July 2010, v. 97, no. 2, 023511, p. 1-3
Abstract: We demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 10⁵ to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure.
Keywords: Nanoparticles
Organic field effect transistors
Organic semiconductors
Random-access storage
Silver
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3462949
Rights: © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.M. Wang, C.W. Leung & P.K.L. Chan, Appl. Phys. Lett. 97, 023511 (2010) and may be found at http://link.aip.org/link/?apl/97/023511
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