Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2504
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dc.contributorDepartment of Applied Physics-
dc.contributorDepartment of Mechanical Engineering-
dc.creatorWang, SM-
dc.creatorLeung, DCW-
dc.creatorChan, PKL-
dc.date.accessioned2014-12-11T08:22:37Z-
dc.date.available2014-12-11T08:22:37Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/2504-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.M. Wang, C.W. Leung & P.K.L. Chan, Appl. Phys. Lett. 97, 023511 (2010) and may be found at http://link.aip.org/link/?apl/97/023511en_US
dc.subjectNanoparticlesen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectRandom-access storageen_US
dc.subjectSilveren_US
dc.titleNonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layersen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. W. Leungen_US
dc.description.otherinformationAuthor name used in this publication: P. K. L. Chanen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume97-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.3462949-
dcterms.abstractWe demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 10⁵ to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 12 July 2010, v. 97, no. 2, 023511, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2010-07-12-
dc.identifier.isiWOS:000279999800085-
dc.identifier.scopus2-s2.0-77955162739-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr52802-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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