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http://hdl.handle.net/10397/87638
Title: | Room temperature in-plane ferroelectricity in van der Waals In2Se3 | Authors: | Zheng, CX Yu, L Zhu, L Collins, JL Kim, D Lou, YD Xu, C Li, M Wei, Z Zhang, YP Edmonds, MT Li, SQ Seidel, J Zhu, Y Liu, JZ Tang, WX Fuhrer, MS |
Issue Date: | 2018 | Source: | Science advances, 13 July 2018, v. 4, no. 7, eaar7720, p. 1-7 | Abstract: | Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material,VIn2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200 degrees C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties. | Publisher: | American Association for the Advancement of Science (AAAS) | Journal: | Science advances | ISSN: | 2375-2548 | DOI: | 10.1126/sciadv.aar7720 | Rights: | Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC) (https://creativecommons.org/licenses/by-nc/4.0/). The following publication Zheng et al., Sci. Adv. 2018;4: eaar7720 is available at https://dx.doi.org/10.1126/sciadv.aar7720 |
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