Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/87638
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zheng, CX | - |
dc.creator | Yu, L | - |
dc.creator | Zhu, L | - |
dc.creator | Collins, JL | - |
dc.creator | Kim, D | - |
dc.creator | Lou, YD | - |
dc.creator | Xu, C | - |
dc.creator | Li, M | - |
dc.creator | Wei, Z | - |
dc.creator | Zhang, YP | - |
dc.creator | Edmonds, MT | - |
dc.creator | Li, SQ | - |
dc.creator | Seidel, J | - |
dc.creator | Zhu, Y | - |
dc.creator | Liu, JZ | - |
dc.creator | Tang, WX | - |
dc.creator | Fuhrer, MS | - |
dc.date.accessioned | 2020-07-16T03:59:46Z | - |
dc.date.available | 2020-07-16T03:59:46Z | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | http://hdl.handle.net/10397/87638 | - |
dc.language.iso | en | en_US |
dc.publisher | American Association for the Advancement of Science (AAAS) | en_US |
dc.rights | Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC) (https://creativecommons.org/licenses/by-nc/4.0/). | en_US |
dc.rights | The following publication Zheng et al., Sci. Adv. 2018;4: eaar7720 is available at https://dx.doi.org/10.1126/sciadv.aar7720 | en_US |
dc.title | Room temperature in-plane ferroelectricity in van der Waals In2Se3 | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 7 | - |
dc.identifier.volume | 4 | - |
dc.identifier.issue | 7 | - |
dc.identifier.doi | 10.1126/sciadv.aar7720 | - |
dcterms.abstract | Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material,VIn2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200 degrees C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Science advances, 13 July 2018, v. 4, no. 7, eaar7720, p. 1-7 | - |
dcterms.isPartOf | Science advances | - |
dcterms.issued | 2018 | - |
dc.identifier.isi | WOS:000443176100027 | - |
dc.identifier.pmid | 30027116 | - |
dc.identifier.artn | eaar7720 | - |
dc.identifier.rosgroupid | 2018005690 | - |
dc.description.ros | 2018-2019 > Academic research: refereed > Publication in refereed journal | - |
dc.description.validate | 202007 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Others (ROS1819) | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Zheng_Room_Temperature_In-plane.pdf | 1.69 MB | Adobe PDF | View/Open |
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