Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-Sensitive, broadband photodetectors, and image sensor application

Abstract

Group-10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self-powered photodetector is developed with broadband response ranging from deep ultraviolet to near-infrared by combining FA(1-x)Cs(x)PbI(3) perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as-assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at approximate to 800 nm. The device also shows a large on/off ratio of approximate to 10(4), a high responsivity (R) of 313 mA W-1, a decent specific detectivity (D