Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/81314
DC Field | Value | Language |
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dc.contributor | Department of Applied Physics | - |
dc.creator | Zeng, LH | - |
dc.creator | Chen, QM | - |
dc.creator | Zhang, ZX | - |
dc.creator | Wu, D | - |
dc.creator | Yuan, HY | - |
dc.creator | Li, YY | - |
dc.creator | Qarony, W | - |
dc.creator | Lau, SP | - |
dc.creator | Luo, LB | - |
dc.creator | Tsang, YH | - |
dc.date.accessioned | 2019-09-20T00:55:01Z | - |
dc.date.available | 2019-09-20T00:55:01Z | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | http://hdl.handle.net/10397/81314 | - |
dc.language.iso | en | en_US |
dc.publisher | Wiley-VCH | en_US |
dc.rights | © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. | en_US |
dc.rights | The following publication Zeng, L. H., Chen, Q. M., Zhang, Z. X., Wu, D., Yuan, H. Y., Li, Y. Y., . . . Tsang, Y. H. (2019). Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-Sensitive, broadband photodetectors, and image sensor application. Advanced Science, 1901134, 1-9 is available at https://dx.doi.org/10.1002/advs.201901134 | en_US |
dc.subject | Image sensors | en_US |
dc.subject | Palladium diselenide | en_US |
dc.subject | Perovskites | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Polarization-sensitive | en_US |
dc.title | Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-Sensitive, broadband photodetectors, and image sensor application | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 9 | - |
dc.identifier.doi | 10.1002/advs.201901134 | - |
dcterms.abstract | Group-10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self-powered photodetector is developed with broadband response ranging from deep ultraviolet to near-infrared by combining FA(1-x)Cs(x)PbI(3) perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as-assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at approximate to 800 nm. The device also shows a large on/off ratio of approximate to 10(4), a high responsivity (R) of 313 mA W-1, a decent specific detectivity (D | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Advanced science, 2019, 1901134, p. 1-9 | - |
dcterms.isPartOf | Advanced science | - |
dcterms.issued | 2019 | - |
dc.identifier.isi | WOS:000479248500001 | - |
dc.identifier.scopus | 2-s2.0-85070692531 | - |
dc.identifier.artn | 1901134 | - |
dc.description.validate | 201909 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Zeng_Multilayered_PdSe2_Perovskiteu.pdf | 4.49 MB | Adobe PDF | View/Open |
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