Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/81314
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dc.contributorDepartment of Applied Physics-
dc.creatorZeng, LH-
dc.creatorChen, QM-
dc.creatorZhang, ZX-
dc.creatorWu, D-
dc.creatorYuan, HY-
dc.creatorLi, YY-
dc.creatorQarony, W-
dc.creatorLau, SP-
dc.creatorLuo, LB-
dc.creatorTsang, YH-
dc.date.accessioned2019-09-20T00:55:01Z-
dc.date.available2019-09-20T00:55:01Z-
dc.identifier.issn2198-3844-
dc.identifier.urihttp://hdl.handle.net/10397/81314-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.rights© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rightsThe following publication Zeng, L. H., Chen, Q. M., Zhang, Z. X., Wu, D., Yuan, H. Y., Li, Y. Y., . . . Tsang, Y. H. (2019). Multilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-Sensitive, broadband photodetectors, and image sensor application. Advanced Science, 1901134, 1-9 is available at https://dx.doi.org/10.1002/advs.201901134en_US
dc.subjectImage sensorsen_US
dc.subjectPalladium diselenideen_US
dc.subjectPerovskitesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPolarization-sensitiveen_US
dc.titleMultilayered PdSe2/perovskite Schottky junction for fast, self-powered, polarization-Sensitive, broadband photodetectors, and image sensor applicationen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage9-
dc.identifier.doi10.1002/advs.201901134-
dcterms.abstractGroup-10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self-powered photodetector is developed with broadband response ranging from deep ultraviolet to near-infrared by combining FA(1-x)Cs(x)PbI(3) perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as-assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at approximate to 800 nm. The device also shows a large on/off ratio of approximate to 10(4), a high responsivity (R) of 313 mA W-1, a decent specific detectivity (D-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAdvanced science, 2019, 1901134, p. 1-9-
dcterms.isPartOfAdvanced science-
dcterms.issued2019-
dc.identifier.isiWOS:000479248500001-
dc.identifier.scopus2-s2.0-85070692531-
dc.identifier.artn1901134-
dc.description.validate201909 bcrc-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.pubStatusPublisheden_US
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