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Title: In 2 S 3 Quantum Dots : preparation, properties and optoelectronic application
Authors: Li, R
Tang, L
Zhao, Q
Ly, TH
Teng, KS
Li, Y
Hu, Y
Shu, C
Lau, SP 
Keywords: In 2 S 3 QDs
Optoelectronic application
Issue Date: 2019
Publisher: Springer
Source: Nanoscale research letters, 2019, v. 14, 161 How to cite?
Journal: Nanoscale research letters 
Abstract: Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.
ISSN: 1931-7573
EISSN: 1556-276X
DOI: 10.1186/s11671-019-2992-0
Rights: © The Author(s). 2019 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
The following publication Li, R., Tang, L., Zhao, Q., Ly, T. H., Teng, K. S., Li, Y., ... & Lau, S. P. (2019). In 2 S 3 Quantum Dots: Preparation, Properties and Optoelectronic Application. Nanoscale research letters, 14(1), 161 is available at
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