Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/81210
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, R | - |
dc.creator | Tang, L | - |
dc.creator | Zhao, Q | - |
dc.creator | Ly, TH | - |
dc.creator | Teng, KS | - |
dc.creator | Li, Y | - |
dc.creator | Hu, Y | - |
dc.creator | Shu, C | - |
dc.creator | Lau, SP | - |
dc.date.accessioned | 2019-08-23T08:29:46Z | - |
dc.date.available | 2019-08-23T08:29:46Z | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.uri | http://hdl.handle.net/10397/81210 | - |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.rights | © The Author(s). 2019 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. | en_US |
dc.rights | The following publication Li, R., Tang, L., Zhao, Q., Ly, T. H., Teng, K. S., Li, Y., ... & Lau, S. P. (2019). In 2 S 3 Quantum Dots: Preparation, Properties and Optoelectronic Application. Nanoscale research letters, 14(1), 161 is available at https://doi.org/10.1186/s11671-019-2992-0 | en_US |
dc.subject | In 2 S 3 QDs | en_US |
dc.subject | Optoelectronic application | en_US |
dc.subject | Preparation | en_US |
dc.subject | Properties | en_US |
dc.title | In 2 S 3 Quantum Dots : preparation, properties and optoelectronic application | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 14 | - |
dc.identifier.doi | 10.1186/s11671-019-2992-0 | - |
dcterms.abstract | Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nanoscale research letters, 2019, v. 14, 161 | - |
dcterms.isPartOf | Nanoscale research letters | - |
dcterms.issued | 2019 | - |
dc.identifier.scopus | 2-s2.0-85065917426 | - |
dc.identifier.eissn | 1556-276X | - |
dc.identifier.artn | 161 | - |
dc.description.validate | 201908 bcma | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Li_Quantum_Dots_Preparation.pdf | 2.24 MB | Adobe PDF | View/Open |
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