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|Title:||Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching||Authors:||Zhao, XW
|Issue Date:||2018||Publisher:||Nature Publishing Group||Source:||NPJ quantum materials, Oct. 2018, v. 3, 52, p. 1-8 How to cite?||Journal:||NPJ quantum materials||Abstract:||Reversible and nonvolatile electric-field control of the physical properties of topological insulators is essential for fundamental research and development of practical electronic devices. Here, we report the integration of topological insulator films with ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) single crystals in the form of ferroelectric field-effect devices that allow us to tune the electronic properties of topological insulator films in a reversible and nonvolatile manner. Specifically, gating of Cr-doped Bi2Se3 films with the PMN-PT layer is shown to provide a means to reversibly tune and modulate the carrier density and carrier type, as well as its other properties, such as the conductance, magnetoconductance, Fermi level, phase coherence length, and screening factor of electron-electron interaction by polarization switching at room temperature. These findings provide a simple and direct approach for probing the quantum transport properties of topological insulator films through ferroelectric gating by using PMN-PT. The combination of topological insulators with both ferroelectrically and piezoelectrically active PMN-PT thus offers a promising step toward exploring topological insulator/ferroelectric(piezoelectric) hybrid devices that could utilize not only the ferroelectric field-effect of topological insulator/PMN-PT structures but also the unique properties of respective materials.||URI:||http://hdl.handle.net/10397/80291||ISSN:||2397-4648||DOI:||10.1038/s41535-018-0125-0||Rights:||Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
© The Author(s) 2018
The following publication Zhao, X.W., Dong, S.N., Gao, G.Y., Xu, Z.X., Xu, M., Yan, J.M., ... & Zheng, R.K. (2018). Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching. NPJ quantum materials, 3, 52, 1-8 is available at https://dx.doi.org/10.1038/s41535-018-0125-0
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