Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/80291
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zhao, XW | - |
dc.creator | Dong, SN | - |
dc.creator | Gao, GY | - |
dc.creator | Xu, ZX | - |
dc.creator | Xu, M | - |
dc.creator | Yan, JM | - |
dc.creator | Zhao, WY | - |
dc.creator | Liu, YK | - |
dc.creator | Yan, SY | - |
dc.creator | Zhang, JX | - |
dc.creator | Wang, Y | - |
dc.creator | Lu, HZ | - |
dc.creator | Li, XG | - |
dc.creator | Furdyna, JK | - |
dc.creator | Luo, HS | - |
dc.creator | Zheng, RK | - |
dc.date.accessioned | 2019-01-30T09:14:41Z | - |
dc.date.available | 2019-01-30T09:14:41Z | - |
dc.identifier.issn | 2397-4648 | - |
dc.identifier.uri | http://hdl.handle.net/10397/80291 | - |
dc.language.iso | en | en_US |
dc.publisher | Nature Publishing Group | en_US |
dc.rights | Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. | en_US |
dc.rights | © The Author(s) 2018 | en_US |
dc.rights | The following publication Zhao, X.W., Dong, S.N., Gao, G.Y., Xu, Z.X., Xu, M., Yan, J.M., ... & Zheng, R.K. (2018). Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching. NPJ quantum materials, 3, 52, 1-8 is available at https://dx.doi.org/10.1038/s41535-018-0125-0 | en_US |
dc.title | Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 8 | - |
dc.identifier.volume | 3 | - |
dc.identifier.doi | 10.1038/s41535-018-0125-0 | - |
dcterms.abstract | Reversible and nonvolatile electric-field control of the physical properties of topological insulators is essential for fundamental research and development of practical electronic devices. Here, we report the integration of topological insulator films with ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) single crystals in the form of ferroelectric field-effect devices that allow us to tune the electronic properties of topological insulator films in a reversible and nonvolatile manner. Specifically, gating of Cr-doped Bi2Se3 films with the PMN-PT layer is shown to provide a means to reversibly tune and modulate the carrier density and carrier type, as well as its other properties, such as the conductance, magnetoconductance, Fermi level, phase coherence length, and screening factor of electron-electron interaction by polarization switching at room temperature. These findings provide a simple and direct approach for probing the quantum transport properties of topological insulator films through ferroelectric gating by using PMN-PT. The combination of topological insulators with both ferroelectrically and piezoelectrically active PMN-PT thus offers a promising step toward exploring topological insulator/ferroelectric(piezoelectric) hybrid devices that could utilize not only the ferroelectric field-effect of topological insulator/PMN-PT structures but also the unique properties of respective materials. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | NPJ quantum materials, Oct. 2018, v. 3, 52, p. 1-8 | - |
dcterms.isPartOf | NPJ quantum materials | - |
dcterms.issued | 2018 | - |
dc.identifier.isi | WOS:000449707300002 | - |
dc.identifier.artn | 52 | - |
dc.description.validate | 201901 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Zhao_Reversible_Nonvolatile_Electronic.pdf | 2.93 MB | Adobe PDF | View/Open |
Page views
154
Last Week
0
0
Last month
Citations as of Mar 24, 2024
Downloads
156
Citations as of Mar 24, 2024
SCOPUSTM
Citations
19
Citations as of Mar 22, 2024
WEB OF SCIENCETM
Citations
21
Last Week
0
0
Last month
Citations as of Mar 28, 2024
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.