Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/76315
Title: Photoelectric properties of Si doping superlattice structure on 6H-SiC(0001)
Authors: Li, LB
Zang, Y
Hu, JC
Lin, SH 
Chen, ZM
Keywords: Si
6H-SiC heterostructure
Doping superlattice
Photoelectric properties
Chemical vapor deposition
Transmission electron microscopy
Issue Date: 2017
Publisher: Molecular Diversity Preservation International (MDPI)
Source: Materials, 2017, v. 10, no. 6, UNSP 583 How to cite?
Journal: Materials 
Abstract: The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 < 21-1 > at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm(2), the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm(2). Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.
URI: http://hdl.handle.net/10397/76315
ISSN: 1996-1944
EISSN: 1996-1944
DOI: 10.3390/ma10060583
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