Photoelectric properties of Si doping superlattice structure on 6H-SiC(0001)

Abstract

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 < 21-1 > at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm(2), the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm(2). Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.