Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/76163
Title: Enhanced resistive memory in Nb-doped BaTiO3 ferroelectric diodes
Authors: Jin, Q
Zheng, CY
Zhang, YC
Lu, CJ
Dai, JY 
Wen, Z 
Issue Date: 2017
Publisher: American Institute of Physics
Source: Applied physics letters, 2017, v. 111, no. 3, 32902 How to cite?
Journal: Applied physics letters 
Abstract: In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of similar to 2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3 diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb: BaTiO3/SrRuO3 interface associated with the (Nb-Ti4+(5+)) donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3 device since the (Fe-Ti4+(3+))' acceptors suppress semiconducting character of the BaTiO3 thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects. Published by AIP Publishing.
URI: http://hdl.handle.net/10397/76163
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4993938
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