Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/76163
Title: Enhanced resistive memory in Nb-doped BaTiO3 ferroelectric diodes
Authors: Jin, Q
Zheng, CY
Zhang, YC
Lu, CJ
Dai, JY 
Wen, Z 
Issue Date: 2017
Publisher: American Institute of Physics
Source: Applied physics letters, 2017, v. 111, no. 3, 32902 How to cite?
Journal: Applied physics letters 
Abstract: In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of similar to 2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3 diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb: BaTiO3/SrRuO3 interface associated with the (Nb-Ti4+(5+)) donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3 device since the (Fe-Ti4+(3+))' acceptors suppress semiconducting character of the BaTiO3 thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects. Published by AIP Publishing.
URI: http://hdl.handle.net/10397/76163
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4993938
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

16
Citations as of Nov 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.