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Title: | Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation | Authors: | Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM |
Issue Date: | 2017 | Source: | IOP Conference Series: Materials Science and Engineering, 2017, v. 229, no. 1, 012018 | Abstract: | Ge Metal-Oxide-Semiconductor (MOS) capacitor with HfTiON/ZrLaON stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the ZrLaON passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (3.7×1011 cm-2eV-1), small flatband voltage (0.21 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.41×10-5 A/cm2 at Vg = Vfb + 1V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the ZrLaON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the ZrLaON/Ge interface and improving the electrical properties of the device. | Publisher: | Institute of Physics Publishing | ISSN: | 1757-8981 | DOI: | 10.1088/1757-899X/229/1/012018 | Description: | 2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMRMT 2017, Phuket, Thailand, 2-5 August, 2017 | Rights: | Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (https://creativecommons.org/licenses/by/3.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd The following publication Huang, Y., Xu, J. P., Liu, L., Cheng, Z. X., Lai, P. T., & Tang, W. M. (2017, September). Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation. In IOP Conference Series. Materials Science and Engineering, 229(1), 012018 is available at https://doi.org/10.1088/1757-899X/229/1/012018 |
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