Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/74805
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Huang, Y | - |
dc.creator | Xu, JP | - |
dc.creator | Liu, L | - |
dc.creator | Cheng, ZX | - |
dc.creator | Lai, PT | - |
dc.creator | Tang, WM | - |
dc.date.accessioned | 2018-03-29T09:33:55Z | - |
dc.date.available | 2018-03-29T09:33:55Z | - |
dc.identifier.issn | 1757-8981 | - |
dc.identifier.uri | http://hdl.handle.net/10397/74805 | - |
dc.description | 2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMRMT 2017, Phuket, Thailand, 2-5 August, 2017 | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.rights | Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (https://creativecommons.org/licenses/by/3.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | en_US |
dc.rights | Published under licence by IOP Publishing Ltd | en_US |
dc.rights | The following publication Huang, Y., Xu, J. P., Liu, L., Cheng, Z. X., Lai, P. T., & Tang, W. M. (2017, September). Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation. In IOP Conference Series. Materials Science and Engineering, 229(1), 012018 is available at https://doi.org/10.1088/1757-899X/229/1/012018 | en_US |
dc.title | Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation | en_US |
dc.type | Conference Paper | en_US |
dc.identifier.volume | 229 | - |
dc.identifier.issue | 1 | - |
dc.identifier.doi | 10.1088/1757-899X/229/1/012018 | - |
dcterms.abstract | Ge Metal-Oxide-Semiconductor (MOS) capacitor with HfTiON/ZrLaON stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the ZrLaON passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (3.7×1011 cm-2eV-1), small flatband voltage (0.21 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.41×10-5 A/cm2 at Vg = Vfb + 1V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the ZrLaON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the ZrLaON/Ge interface and improving the electrical properties of the device. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | IOP Conference Series: Materials Science and Engineering, 2017, v. 229, no. 1, 012018 | - |
dcterms.issued | 2017 | - |
dc.identifier.scopus | 2-s2.0-85033783911 | - |
dc.relation.conference | International Conference on Advanced Materials Research and Manufacturing Technologies [AMRMT] | - |
dc.identifier.artn | 012018 | - |
dc.identifier.rosgroupid | 2017005266 | - |
dc.description.ros | 2017-2018 > Academic research: refereed > Publication in refereed journal | - |
dc.description.validate | 201803 bcma | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Conference Paper |
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Huang_Interfacial_Electrical_Properties.pdf | 783.38 kB | Adobe PDF | View/Open |
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