Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74805
Title: Interfacial and electrical properties of Ge MOS capacitor by ZrLaON passivation layer and fluorine incorporation
Authors: Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM 
Issue Date: 2017
Publisher: Institute of Physics Publishing
Source: IOP Conference Series: Materials Science and Engineering, 2017, v. 229, no. 1, 012018 How to cite?
Abstract: Ge Metal-Oxide-Semiconductor (MOS) capacitor with HfTiON/ZrLaON stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the ZrLaON passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (3.7×1011 cm-2eV-1), small flatband voltage (0.21 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.41×10-5 A/cm2 at Vg = Vfb + 1V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the ZrLaON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the ZrLaON/Ge interface and improving the electrical properties of the device.
Description: 2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMRMT 2017, Phuket, Thailand, 2-5 August, 2017
URI: http://hdl.handle.net/10397/74805
ISSN: 1757-8981
DOI: 10.1088/1757-899X/229/1/012018
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