Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/7086
Title: Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics
Authors: Xu, B
Hao, JH 
Zhou, S
Qiu, J
Keywords: Fluorescent and luminescent materials
Thin films
Optical properties
Optical communications
Intergrated optics devices
Issue Date: 29-Jul-2013
Publisher: Optical Society of America
Source: Optics express, 29 July 2013, v. 21, no. 15, p. 18532-18537 How to cite?
Journal: Optics express 
Abstract: Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO₃, silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.
URI: http://hdl.handle.net/10397/7086
EISSN: 1094-4087
DOI: 10.1364/OE.21.018532
Rights: ©2013 Optical Society of America
This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18532. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
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