Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/7086
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Xu, B | - |
dc.creator | Hao, JH | - |
dc.creator | Zhou, S | - |
dc.creator | Qiu, J | - |
dc.date.accessioned | 2014-12-11T08:26:42Z | - |
dc.date.available | 2014-12-11T08:26:42Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/7086 | - |
dc.language.iso | en | en_US |
dc.publisher | Optical Society of America | en_US |
dc.rights | ©2013 Optical Society of America | en_US |
dc.rights | This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18532. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law. | en_US |
dc.subject | Fluorescent and luminescent materials | en_US |
dc.subject | Thin films | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Optical communications | en_US |
dc.subject | Intergrated optics devices | en_US |
dc.title | Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Jianhua Hao | en_US |
dc.identifier.spage | 18532 | - |
dc.identifier.epage | 18537 | - |
dc.identifier.volume | 21 | - |
dc.identifier.issue | 15 | - |
dc.identifier.doi | 10.1364/OE.21.018532 | - |
dcterms.abstract | Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO₃, silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Optics express, 29 July 2013, v. 21, no. 15, p. 18532-18537 | - |
dcterms.isPartOf | Optics express | - |
dcterms.issued | 2013-07-29 | - |
dc.identifier.isi | WOS:000322366300114 | - |
dc.identifier.scopus | 2-s2.0-84880941959 | - |
dc.identifier.eissn | 1094-4087 | - |
dc.identifier.rosgroupid | r70743 | - |
dc.description.ros | 2013-2014 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Xu_Ultra-broadband_Infrared_Luminescence.pdf | 1.04 MB | Adobe PDF | View/Open |
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