Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/7086
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dc.contributorDepartment of Applied Physics-
dc.creatorXu, B-
dc.creatorHao, JH-
dc.creatorZhou, S-
dc.creatorQiu, J-
dc.date.accessioned2014-12-11T08:26:42Z-
dc.date.available2014-12-11T08:26:42Z-
dc.identifier.urihttp://hdl.handle.net/10397/7086-
dc.language.isoenen_US
dc.publisherOptical Society of Americaen_US
dc.rights©2013 Optical Society of Americaen_US
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18532. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.en_US
dc.subjectFluorescent and luminescent materialsen_US
dc.subjectThin filmsen_US
dc.subjectOptical propertiesen_US
dc.subjectOptical communicationsen_US
dc.subjectIntergrated optics devicesen_US
dc.titleUltra-broadband infrared luminescence of Bi-doped thin-films for integrated opticsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Jianhua Haoen_US
dc.identifier.spage18532-
dc.identifier.epage18537-
dc.identifier.volume21-
dc.identifier.issue15-
dc.identifier.doi10.1364/OE.21.018532-
dcterms.abstractUltra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO₃, silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationOptics express, 29 July 2013, v. 21, no. 15, p. 18532-18537-
dcterms.isPartOfOptics express-
dcterms.issued2013-07-29-
dc.identifier.isiWOS:000322366300114-
dc.identifier.scopus2-s2.0-84880941959-
dc.identifier.eissn1094-4087-
dc.identifier.rosgroupidr70743-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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