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Title: Influence of shape anisotropy on magnetization dynamics driven by spin hall effect
Authors: Li, XG
Liu, ZJ
Xie, XY
Kang, AG
Fu, WN 
Issue Date: 2016
Publisher: Hindawi Publishing Corporation
Source: Advances in materials science and engineering, 2016, v. 2016, 4259846 How to cite?
Journal: Advances in materials science and engineering 
Abstract: As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.
ISSN: 1687-8434
EISSN: 1687-8442
DOI: 10.1155/2016/4259846
Rights: Copyright © 2016 X. G. Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The following article: Li, X. G., Liu, Z. J., Xie, X. Y., Kang, A. G., & Fu, W. N. (2016). Influence of shape anisotropy on magnetization dynamics driven by spin hall effect. Advances in Materials Science and Engineering, 2016, is available at https//
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