Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65605
Title: Fabrication of WS2/GaN p-n junction by wafer-scale WS2 thin film transfer
Authors: Yu, Y
Fong, WK
Wang, S
Surya, C 
Issue Date: 2016
Publisher: Nature Publishing Group
Source: Scientific reports, 2016, v. 6, 37833 How to cite?
Journal: Scientific reports 
Abstract: High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at-1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions.
URI: http://hdl.handle.net/10397/65605
EISSN: 2045-2322
DOI: 10.1038/srep37833
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