Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65605
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorYu, Y-
dc.creatorFong, WK-
dc.creatorWang, S-
dc.creatorSurya, C-
dc.date.accessioned2017-05-22T02:08:55Z-
dc.date.available2017-05-22T02:08:55Z-
dc.identifier.urihttp://hdl.handle.net/10397/65605-
dc.language.isoenen_US
dc.publisherNature Publishing Groupen_US
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_US
dc.rights© The Author(s) 2016en_US
dc.rightsThe following publication Yu, Y., Fong, P., Wang, S. et al. Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer. Sci Rep 6, 37833 (2016) is available at https://dx.doi.org/10.1038/srep37833en_US
dc.titleFabrication of WS2/GaN p-n junction by wafer-scale WS2 thin film transferen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume6-
dc.identifier.doi10.1038/srep37833-
dcterms.abstractHigh quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at-1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationScientific reports, 29 2016, v. 6, no. , 37833, p. 1-11-
dcterms.isPartOfScientific reports-
dcterms.issued2016-
dc.identifier.isiWOS:000388790300001-
dc.identifier.scopus2-s2.0-84999737980-
dc.identifier.ros2016005490-
dc.identifier.eissn2045-2322-
dc.identifier.artn37833-
dc.identifier.rosgroupid2016005239-
dc.description.ros2016-2017 > Academic research: refereed > Publication in refereed journal-
dc.description.validate201804_a bcma-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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