Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65598
Title: Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures
Authors: Yuan, S
Yang, Z
Xie, C
Yan, F 
Dai, J 
Lau, SP 
Chan, HLW 
Hao, J 
Keywords: 2D materials
Ferroelectric thin films
Field-effect transistors
Graphene
Pulsed laser deposition
Issue Date: 2016
Publisher: Wiley-VCH
Source: Advanced materials, 2016, v. 28, no. 45, p. 10048-10054 How to cite?
Journal: Advanced materials 
URI: http://hdl.handle.net/10397/65598
ISSN: 0935-9648
EISSN: 1521-4095
DOI: 10.1002/adma.201601489
Appears in Collections:Journal/Magazine Article

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