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http://hdl.handle.net/10397/65598
| Title: | Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures | Authors: | Yuan, S Yang, Z Xie, C Yan, F Dai, J Lau, SP Chan, HLW Hao, J |
Issue Date: | 7-Dec-2016 | Source: | Advanced materials, 7 Dec. 2016, v. 28, no. 45, p. 10048-10054 | Keywords: | 2D materials Ferroelectric thin films Field-effect transistors Graphene Pulsed laser deposition |
Publisher: | Wiley-VCH | Journal: | Advanced materials | ISSN: | 0935-9648 | EISSN: | 1521-4095 | DOI: | 10.1002/adma.201601489 | Rights: | © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim This is the peer reviewed version of the following article: Yuan, S., Yang, Z., Xie, C., Yan, F., Dai, J., Lau, S. P., ... & Hao, J. (2016). Ferroelectric‐driven performance enhancement of graphene field‐effect transistors based on vertical tunneling heterostructures. Advanced Materials, 28(45), 10048-10054, which has been published in final form at https://doi.org/10.1002/adma.201601489. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. |
| Appears in Collections: | Journal/Magazine Article |
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| Yan_Ferroelectric-Driven_Performance_Enhancement.pdf | Pre-Published version | 1 MB | Adobe PDF | View/Open |
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