Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65436
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Title: Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Authors: Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM 
Issue Date: 2016
Source: Applied physics letters, 2016, v. 109, no. 19, 193504, p. 193504-1-193504-5
Abstract: Ge metal-oxide-semiconductor (MOS) capacitor with HfLaON/(NbON/Si) stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the Si passivation layer or the fluorine-plasma treatment. The experimental results show that the HfLaON/(NbON/Si) Ge MOS device treated by fluorine plasma exhibits excellent performance: low interface-state density (4.3 × 1011 cm-2 eV-1), small flatband voltage (0.22 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.18 × 10-5 A/cm2 at Vg = Vfb + 1 V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the NbON/Si dual interlayer and fluorine incorporation, thus reducing the defective states at/near the NbSiON/Ge interface and improving the electrical properties of the device.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4967186
Rights: © 2016 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Huang et al., Appl. Phys. Lett. 109, 193504 (2016) and may be found at https://dx.doi.org/10.1063/1.4967186
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