Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/64533
Title: Modulation doping of transition metal dichalcogenide/oxide heterostructures
Authors: Xu, K
Wang, Y
Zhao, Y
Chai, Y 
Issue Date: 2017
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry C, 2017, v. 5, no. 2, p. 376-381 How to cite?
Journal: Journal of materials chemistry C 
Abstract: Control of carrier type and carrier density provides a way to tune the physical properties of two-dimensional (2D) semiconductors. Modulation doping of heterostructures can effectively inject carriers into or extract carriers from the 2D semiconductors, and eliminate the adverse effect from the ionized dopants. Here we first investigate the layer-dependent negative trion PL of 2D MoS2, and further construct heterostructures with transition metal dichalcogenides (TMDs) and transition metal oxides (TMOs). By choosing the oxide with different charge neutrality levels (CNLs), we demonstrate effective electron injection into MoS2 by TiO2 doping, and electron extraction from MoS2 by MoO3 doping. Photoluminescence (PL) spectra and electrical characterization show that thicker MoS2 flakes are more easily n-doped by TiO2, while thinner MoS2 flakes are more easily p-doped by MoO3. Our experimental results are in good agreement with theoretical calculations. The modulation doping with TMO is compatible with conventional Si processing and highly air-stable. This method can also be extended for the controllable doping of other 2D materials.
URI: http://hdl.handle.net/10397/64533
ISSN: 2050-7526
EISSN: 2050-7534
DOI: 10.1039/C6TC04640A
Rights: The article is licensed under a Creative Commons Attribution 3.0 Unported (CC BY 3.0) <https://creativecommons.org/licenses/by-nc/3.0/>
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