Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6297
Title: Fabrication of piezoelectric single crystalline thin layer on silicon wafer
Authors: Peng, J
Chao, C
Dai, J 
Chan, HLW 
Issue Date: 17-Sep-2013
Source: US Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013. How to cite?
Abstract: The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm.
URI: http://hdl.handle.net/10397/6297
Rights: Assignee: The Hong Kong Polytechnic University.
Appears in Collections:Patent

Files in This Item:
File Description SizeFormat 
us8536665b2.pdf373.68 kBAdobe PDFView/Open
Show full item record

Page view(s)

258
Last Week
0
Last month
Checked on Jan 15, 2017

Download(s)

70
Checked on Jan 15, 2017

Google ScholarTM

Check



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.