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Title: Fabrication of piezoelectric single crystalline thin layer on silicon wafer
Authors: Peng, J
Chao, C
Dai, J 
Chan, HLW 
Issue Date: 17-Sep-2013
Source: US Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013. How to cite?
Abstract: The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm.
Rights: Assignee: The Hong Kong Polytechnic University.
Appears in Collections:Patent

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