Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/6297
Title: | Fabrication of piezoelectric single crystalline thin layer on silicon wafer | Authors: | Peng, J Chao, C Dai, J Chan, HLW |
Issue Date: | 17-Sep-2013 | Source: | US Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013. | Abstract: | The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm. | Rights: | Assignee: The Hong Kong Polytechnic University. |
Appears in Collections: | Patent |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
us8536665b2.pdf | 373.68 kB | Adobe PDF | View/Open |
Page views
116
Last Week
0
0
Last month
Citations as of Apr 21, 2024
Downloads
44
Citations as of Apr 21, 2024
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.