Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/6297
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Peng, J | - |
dc.creator | Chao, C | - |
dc.creator | Dai, J | - |
dc.creator | Chan, HLW | - |
dc.date.accessioned | 2014-01-14T07:48:55Z | - |
dc.date.available | 2014-01-14T07:48:55Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/6297 | - |
dc.language.iso | en | en_US |
dc.rights | Assignee: The Hong Kong Polytechnic University. | en_US |
dc.title | Fabrication of piezoelectric single crystalline thin layer on silicon wafer | en_US |
dc.type | Patent | en_US |
dc.description.otherinformation | US8536665; US8536665 B2; US8536665B2; US8,536,665; US 8,536,665 B2; 8536665; Appl. No. 11/892,313 | en_US |
dc.description.otherinformation | Inventor name used in this publication: Ji-yan Dai | en_US |
dcterms.abstract | The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm. | - |
dcterms.bibliographicCitation | US Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013. | - |
dcterms.issued | 2013-09-17 | - |
dc.description.country | US | - |
dc.description.oa | Version of Record | en_US |
Appears in Collections: | Patent |
Files in This Item:
File | Description | Size | Format | |
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us8536665b2.pdf | 373.68 kB | Adobe PDF | View/Open |
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