Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6297
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dc.contributorDepartment of Applied Physics-
dc.creatorPeng, J-
dc.creatorChao, C-
dc.creatorDai, J-
dc.creatorChan, HLW-
dc.date.accessioned2014-01-14T07:48:55Z-
dc.date.available2014-01-14T07:48:55Z-
dc.identifier.urihttp://hdl.handle.net/10397/6297-
dc.language.isoenen_US
dc.rightsAssignee: The Hong Kong Polytechnic University.en_US
dc.titleFabrication of piezoelectric single crystalline thin layer on silicon waferen_US
dc.typePatenten_US
dc.description.otherinformationUS8536665; US8536665 B2; US8536665B2; US8,536,665; US 8,536,665 B2; 8536665; Appl. No. 11/892,313en_US
dc.description.otherinformationInventor name used in this publication: Ji-yan Daien_US
dcterms.abstractThe present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm.-
dcterms.bibliographicCitationUS Patent 8,536,665 B2. Washington, DC: US Patent and Trademark Office, 2013.-
dcterms.issued2013-09-17-
dc.description.countryUS-
dc.description.oaVersion of Recorden_US
Appears in Collections:Patent
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