Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6237
Title: In-plane dielectric properties of epitaxial Ba₀.₇Sr₀.₃TiO₃ thin films grown on GaAs for tunable device application
Authors: Yang, Z
Hao, JH 
Keywords: Barium compounds
Buffer layers
Curie temperature
Epitaxial layers
Ferroelectric thin films
Molecular beam epitaxial growth
Permittivity
Pulsed laser deposition
Strontium compounds
Issue Date: 1-Sep-2012
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Sept. 2012, v. 112, no. 5, 054110, p. 1-4 How to cite?
Journal: Journal of applied physics 
Abstract: We have epitaxially deposited ferroelectric Ba₀.₇Sr₀.₃TiO₃ (BST) thin films grown on GaAs substrate via SrTiO₃ buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from −190 to 90 °C, indicating Curie temperature of the BST film to be around 52 °C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application
URI: http://hdl.handle.net/10397/6237
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4749270
Rights: © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yang & J. Hao, J. Appl. Phys. 112, 054110 (2012) and may be found at http://link.aip.org/link/?jap/112/054110.
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