Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6237
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dc.contributorDepartment of Applied Physics-
dc.creatorYang, Z-
dc.creatorHao, JH-
dc.date.accessioned2014-12-11T08:22:30Z-
dc.date.available2014-12-11T08:22:30Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/6237-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yang & J. Hao, J. Appl. Phys. 112, 054110 (2012) and may be found at http://link.aip.org/link/?jap/112/054110.en_US
dc.subjectBarium compoundsen_US
dc.subjectBuffer layersen_US
dc.subjectCurie temperatureen_US
dc.subjectEpitaxial layersen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectPermittivityen_US
dc.subjectPulsed laser depositionen_US
dc.subjectStrontium compoundsen_US
dc.titleIn-plane dielectric properties of epitaxial Ba₀.₇Sr₀.₃TiO₃ thin films grown on GaAs for tunable device applicationen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Jianhua Haoen_US
dc.identifier.volume112-
dc.identifier.issue5-
dc.identifier.doi10.1063/1.4749270-
dcterms.abstractWe have epitaxially deposited ferroelectric Ba₀.₇Sr₀.₃TiO₃ (BST) thin films grown on GaAs substrate via SrTiO₃ buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from −190 to 90 °C, indicating Curie temperature of the BST film to be around 52 °C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Sept. 2012, v. 112, no. 5, 054110, p. 1-4-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2012-09-01-
dc.identifier.isiWOS:000309072200111-
dc.identifier.scopus2-s2.0-84866428985-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr66914-
dc.description.ros2012-2013 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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