Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6233
Title: Domain structures of ferroelectric thin film controlled by oxidizing atmosphere
Authors: Ma, D
Zheng, Y
Wang, B
Woo, CH 
Keywords: Chemical potential
Dielectric polarisation
Electric domain walls
Ferroelectric thin films
Oxidation
Issue Date: 3-Oct-2011
Publisher: American Institute of Physics
Source: Applied physics letters, 3 Oct. 2011, v. 99, , no. 14, 142908, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Evolutions of domain morphology in the ferroelectric thin film subjected to the oxidizing atmosphere were predicted by using the phase field simulations, which incorporate the long-range electrostatic interactions and ionic surface charges. Due to effect of the oxidizing atmosphere, it is found that the ionic surface charges carried by oxygen can effectively change the internal electric filed, control the polarization orientation, and drive the domain wall motion of the ferroelectric thin film. Domain structures were simulated and also reveal that domain morphology of the ferroelectric thin film can be adjusted from a multi-domain to a mono-domain with increasing of the ionic charge density.
URI: http://hdl.handle.net/10397/6233
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3646387
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. C. Ma et al., Appl. Phys. Lett. 99, 142908 (2011) and may be found at http://link.aip.org/link/?apl/99/142908
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