Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6233
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorMa, D-
dc.creatorZheng, Y-
dc.creatorWang, B-
dc.creatorWoo, CH-
dc.date.accessioned2014-12-11T08:25:08Z-
dc.date.available2014-12-11T08:25:08Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/6233-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. C. Ma et al., Appl. Phys. Lett. 99, 142908 (2011) and may be found at http://link.aip.org/link/?apl/99/142908en_US
dc.subjectChemical potentialen_US
dc.subjectDielectric polarisationen_US
dc.subjectElectric domain wallsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectOxidationen_US
dc.titleDomain structures of ferroelectric thin film controlled by oxidizing atmosphereen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Wooen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume99-
dc.identifier.issue14-
dc.identifier.doi10.1063/1.3646387-
dcterms.abstractEvolutions of domain morphology in the ferroelectric thin film subjected to the oxidizing atmosphere were predicted by using the phase field simulations, which incorporate the long-range electrostatic interactions and ionic surface charges. Due to effect of the oxidizing atmosphere, it is found that the ionic surface charges carried by oxygen can effectively change the internal electric filed, control the polarization orientation, and drive the domain wall motion of the ferroelectric thin film. Domain structures were simulated and also reveal that domain morphology of the ferroelectric thin film can be adjusted from a multi-domain to a mono-domain with increasing of the ionic charge density.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 3 Oct. 2011, v. 99, , no. 14, 142908, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2011-10-03-
dc.identifier.isiWOS:000295625100065-
dc.identifier.scopus2-s2.0-80053986339-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr56788-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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