Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6020
Title: Tensile strength of zinc oxide films measured by a microbridge method
Authors: Ong, CW 
Zong, DG
Aravind, M
Choy, CL
Lu, DR
Keywords: Ceramic materials
Chemical vapor deposition
Dry etching
Elastic moduli
Fabrication
Photolithography
Piezoelectric devices
Silicon nitride
Tensile strength
Issue Date: Oct-2003
Publisher: Cambridge University Press
Source: Journal of materials research, Oct. 2003, v. 18, no. 10, p. 2464-2472 How to cite?
Journal: Journal of materials research 
Abstract: Double-layered ZnO/silicon nitride microbridges were fabricated for microbridge tests. In a test, a load was applied to the center of the microbridge specimen by using a microwedge tip, where the displacement was recorded as a function of load until the specimen broke. The silicon nitride layer in the structure served to enhance the robustness of the specimen. By fitting the data to a theory, the elastic modulus, residual stress, and tensile strength of the ZnO film were found to be 137 ± 18 GPa, -0.041 ± 0.02 GPa, and 0.412 ± 0.05 GPa, respectively. The analysis required the elastic modulus, internal stress, and tensile strength of the silicon nitride layer. They were measured separately by microbridge tests on single-layered silicon nitride microbridges. The measured tensile strength of the ZnO films represents the maximum tolerable tensile stress that the films can sustain when they are used as the functional component in devices.
URI: http://hdl.handle.net/10397/6020
ISSN: 0884-2914
2044-5326 (eISSN)
DOI: 10.1557/JMR.2003.0343
Rights: © 2003 Materials Research Society
The following article " C. W. Ong, D. G. Zong, M. Aravind, C. L. Choy and D. R. Lu (2003). Tensile strength of zinc oxide films measured by a microbridge method. Journal of Materials Research, 18(10), p. 2464-2472. doi:10.1557/JMR.2003.0343." is available at http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8175469
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