Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6020
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorOng, CW-
dc.creatorZong, DG-
dc.creatorAravind, M-
dc.creatorChoy, CL-
dc.creatorLu, DR-
dc.date.accessioned2014-12-11T08:24:59Z-
dc.date.available2014-12-11T08:24:59Z-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10397/6020-
dc.language.isoenen_US
dc.publisherCambridge University Pressen_US
dc.rights© 2003 Materials Research Societyen_US
dc.rightsThe following article " C. W. Ong, D. G. Zong, M. Aravind, C. L. Choy and D. R. Lu (2003). Tensile strength of zinc oxide films measured by a microbridge method. Journal of Materials Research, 18(10), p. 2464-2472. doi:10.1557/JMR.2003.0343." is available at http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8175469en_US
dc.subjectCeramic materialsen_US
dc.subjectChemical vapor depositionen_US
dc.subjectDry etchingen_US
dc.subjectElastic modulien_US
dc.subjectFabricationen_US
dc.subjectPhotolithographyen_US
dc.subjectPiezoelectric devicesen_US
dc.subjectSilicon nitrideen_US
dc.subjectTensile strengthen_US
dc.titleTensile strength of zinc oxide films measured by a microbridge methoden_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.identifier.spage2464-
dc.identifier.epage2472-
dc.identifier.volume18-
dc.identifier.issue10-
dc.identifier.doi10.1557/JMR.2003.0343-
dcterms.abstractDouble-layered ZnO/silicon nitride microbridges were fabricated for microbridge tests. In a test, a load was applied to the center of the microbridge specimen by using a microwedge tip, where the displacement was recorded as a function of load until the specimen broke. The silicon nitride layer in the structure served to enhance the robustness of the specimen. By fitting the data to a theory, the elastic modulus, residual stress, and tensile strength of the ZnO film were found to be 137 ± 18 GPa, -0.041 ± 0.02 GPa, and 0.412 ± 0.05 GPa, respectively. The analysis required the elastic modulus, internal stress, and tensile strength of the silicon nitride layer. They were measured separately by microbridge tests on single-layered silicon nitride microbridges. The measured tensile strength of the ZnO films represents the maximum tolerable tensile stress that the films can sustain when they are used as the functional component in devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of materials research, Oct. 2003, v. 18, no. 10, p. 2464-2472-
dcterms.isPartOfJournal of materials research-
dcterms.issued2003-10-
dc.identifier.isiWOS:000185821000027-
dc.identifier.scopus2-s2.0-0242408411-
dc.identifier.eissn2044-5326-
dc.identifier.rosgroupidr20064-
dc.description.ros2003-2004 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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