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http://hdl.handle.net/10397/5897
Title: | Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films | Authors: | Wang, XL Shao, Q Leung, CW Ruotolo, A |
Issue Date: | 7-May-2013 | Source: | Journal of applied physics, 7 May 2013, v. 113, no. 17, 17C301, p. 1-3 | Abstract: | We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies. | Keywords: | II-VI semiconductors Magnetic moments Manganese Memristors Semiconductor thin films Vacancies (crystal) Zinc compounds |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.4793639 | Rights: | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. L. Wang et al., J. Appl. Phys. 113, 17C301 (2013) and may be found at http://link.aip.org/link/?jap/113/17C301 |
Appears in Collections: | Journal/Magazine Article |
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