Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/5897
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Wang, XL | - |
dc.creator | Shao, Q | - |
dc.creator | Leung, CW | - |
dc.creator | Ruotolo, A | - |
dc.date.accessioned | 2014-12-11T08:28:10Z | - |
dc.date.available | 2014-12-11T08:28:10Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/5897 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. L. Wang et al., J. Appl. Phys. 113, 17C301 (2013) and may be found at http://link.aip.org/link/?jap/113/17C301 | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Magnetic moments | en_US |
dc.subject | Manganese | en_US |
dc.subject | Memristors | en_US |
dc.subject | Semiconductor thin films | en_US |
dc.subject | Vacancies (crystal) | en_US |
dc.subject | Zinc compounds | en_US |
dc.title | Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 113 | - |
dc.identifier.issue | 17 | - |
dc.identifier.doi | 10.1063/1.4793639 | - |
dcterms.abstract | We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 7 May 2013, v. 113, no. 17, 17C301, p. 1-3 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2013-05-07 | - |
dc.identifier.isi | WOS:000319292800169 | - |
dc.identifier.scopus | 2-s2.0-84877739867 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r66238 | - |
dc.description.ros | 2012-2013 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Wang_non_volatile_reversible.pdf | 683.48 kB | Adobe PDF | View/Open |
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