Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5897
Title: Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films
Authors: Wang, XL
Shao, Q
Leung, CW 
Ruotolo, A
Keywords: II-VI semiconductors
Magnetic moments
Manganese
Memristors
Semiconductor thin films
Vacancies (crystal)
Zinc compounds
Issue Date: 7-May-2013
Publisher: American Institute of Physics
Source: Journal of applied physics, 7 May 2013, v. 113, no. 17, 17C301, p. 1-3 How to cite?
Journal: Journal of applied physics 
Abstract: We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies.
URI: http://hdl.handle.net/10397/5897
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4793639
Rights: © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. L. Wang et al., J. Appl. Phys. 113, 17C301 (2013) and may be found at http://link.aip.org/link/?jap/113/17C301
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