Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5895
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Title: Crystallite size-modulated exciton emission in SnO₂ nanocrystalline films grown by sputtering
Authors: Pan, S
Yu, SF 
Zhang, YX
Luo, YY
Wang, S
Xu, JM
Li, GH
Issue Date: 14-Apr-2013
Source: Journal of applied physics, 14 Apr. 2013, v. 113, no. 14, 143104, p. 1-4
Abstract: SnO ₂ nanocrystalline films with different crystallite sizes were grown by direct current sputtering. All the films show radiative recombination of free exciton (FX) and surface exciton (SX) with emission peaks varied from 330 to 338 nm and from 364 to 375 nm, respectively. The emission intensities of FX and SX versus crystallite size, excitation intensity, and temperature were also investigated. It was found that the emission intensities of both FX and SX increase with the decrease of the crystallite size of the films. In addition, the crystallite size has significant influence on the emission intensity of FX than SX. A model was also established to describe the relationship between crystallite size and excitonic emission intensity. From the temperature-dependent photoluminescence spectra, the activation energies of FX and SX are deduced.
Keywords: Crystallites
Energy gap
Excitons
Nanofabrication
Nanostructured materials
Photoluminescence
Semiconductor growth
Semiconductor thin films
Sputter deposition
Tin compounds
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4800896
Rights: © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Shu Sheng Pan et al., J. Appl. Phys. 113, 143104 (2013) and may be found at http://link.aip.org/link/?jap/113/143104
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