Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/5895
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Pan, S | - |
dc.creator | Yu, SF | - |
dc.creator | Zhang, YX | - |
dc.creator | Luo, YY | - |
dc.creator | Wang, S | - |
dc.creator | Xu, JM | - |
dc.creator | Li, GH | - |
dc.date.accessioned | 2014-12-11T08:24:41Z | - |
dc.date.available | 2014-12-11T08:24:41Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/5895 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Shu Sheng Pan et al., J. Appl. Phys. 113, 143104 (2013) and may be found at http://link.aip.org/link/?jap/113/143104 | en_US |
dc.subject | Crystallites | en_US |
dc.subject | Energy gap | en_US |
dc.subject | Excitons | en_US |
dc.subject | Nanofabrication | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Semiconductor growth | en_US |
dc.subject | Semiconductor thin films | en_US |
dc.subject | Sputter deposition | en_US |
dc.subject | Tin compounds | en_US |
dc.title | Crystallite size-modulated exciton emission in SnO₂ nanocrystalline films grown by sputtering | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Pan, Shu Sheng. | en_US |
dc.description.otherinformation | Author name used in this publication: Yu, Siu Fung. | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 4 | - |
dc.identifier.volume | 113 | - |
dc.identifier.issue | 14 | - |
dc.identifier.doi | 10.1063/1.4800896 | - |
dcterms.abstract | SnO ₂ nanocrystalline films with different crystallite sizes were grown by direct current sputtering. All the films show radiative recombination of free exciton (FX) and surface exciton (SX) with emission peaks varied from 330 to 338 nm and from 364 to 375 nm, respectively. The emission intensities of FX and SX versus crystallite size, excitation intensity, and temperature were also investigated. It was found that the emission intensities of both FX and SX increase with the decrease of the crystallite size of the films. In addition, the crystallite size has significant influence on the emission intensity of FX than SX. A model was also established to describe the relationship between crystallite size and excitonic emission intensity. From the temperature-dependent photoluminescence spectra, the activation energies of FX and SX are deduced. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 14 Apr. 2013, v. 113, no. 14, 143104, p. 1-4 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2013-04-14 | - |
dc.identifier.isi | WOS:000318250600004 | - |
dc.identifier.scopus | 2-s2.0-84876396522 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r67528 | - |
dc.description.ros | 2012-2013 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Pan_crystallite_size_modulated.pdf | 848.07 kB | Adobe PDF | View/Open |
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