Partial oxidation of thin film ruthenium in MOS structure-chemical, compositional and electrical properties

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5889

Title:	Partial oxidation of thin film ruthenium in MOS structure-chemical, compositional and electrical properties
Authors:	Jelenković, EV To, S
Issue Date:	6-Mar-2013
Source:	ECS Solid state letters, 6 Mar. 2013, v. 2, no. 5, p. 42-43
Abstract:	Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO₂ growth front. Presence of RuO₂ close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO₂. Oxidation of Ru increases the interface states density.
Keywords:	Film growth Oxidation Photoelectrons Ruthenium Solid state physics X ray photoelectron spectroscopy
Publisher:	The Electrochemical Society
Journal:	ECS Solid state letters
ISSN:	2162-8742 (print) 2162-8750 (online)
DOI:	10.1149/2.008305ssl
Rights:	© The Electrochemical Society, Inc. 2013. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Solid State Letters, 6 Mar. 2013, v. 2, no. 5, p. 42-43.
Appears in Collections:	Journal/Magazine Article

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